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Ordering number : ENA0336
CPH5852
SANYO Semiconductors
DATA SHEET
CPH5852
Features
*
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
General-Purpose Switching Device Applications
*
*
Composite type containing a P-Channel MOSFET (MCH3312) and a Schottky Barrier Diode (SB1003M3), facilitating high-density mounting. [MOS] * Low ON-resistance * Ultrahigh-speed switching * 4V drive [SBD] * Short reverse recovery time * Low forward voltage
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1cycle 30 35 1 10 --55 to +125 --55 to +125 V V A A C C VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (600mm2!0.8mm) 1unit --30 20 --2 --8 0.9 150 --55 to +125 V V A A W C C Symbol Conditions Ratings Unit
Marking : YE
Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
GI No. 82306 / 60506PE MS IM TB-00002326 IM A0336-1/6
CPH5852
Electrical Characteristics at Ta=25C
Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF 1 VF 2 IR C trr IR=0.5mA IF=0.7A IF=1.0A VR=16V VR=10V, f=1MHz cycle IF=IR=100mA, See specified Test Circuit. 30 0.45 0.48 27 10 0.5 0.53 15 V V V A pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGSS=16V, VDS=0V VDS=--10V, ID=-1mA VDS=--10V, ID=-1A ID=--1A, VGS=--10V ID=--500mA, VGS=-4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-10V, ID=--2A VDS=--10V, VGS=-10V, ID=--2A VDS=--10V, VGS=-10V, ID=--2A IS=--2A, VGS=0V --30 --1 10 --1.2 1.2 2.0 110 205 200 47 32 7.2 2.9 21 8.7 5.5 0.98 0.82 --0.85 --1.2 145 290 --2.6 V A A V S m m pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit
Package Dimensions unit : mmm 7017A-005
2.9 0.15
Electrical Connection
5
0.6
4
3
5
4
3
0.2
2.8
1.6
0.05
1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode
1 2
Top view
0.6
1
0.95
2
0.4
1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5
0.9
0.2
No. A0336-2/6
CPH5852
Switching Time Test Circuit
[MOSFET]
VIN 0V --10V VIN ID= --1A RL=15 VOUT
50 10s --5V 100 10
trr Test Circuit
[SBD]
Duty10%
VDD= --15V
100mA
D
PW=10s D.C.1%
G
100mA
trr
CPH5852 P.G 50
S
V
--2.0
ID -- VDS
V
--10. 0
[MOSFET]
--5.0
ID -- VGS
VDS= --10V
--6.0
0V
--4.
--4.5 --4.0
--1.6
Drain Current, ID -- A
. --3
--1.2
5V
Drain Current, ID -- A
--3.5 --3.0 --2.5 --2.0
--0.8
VGS= --3.0V
--0.4
--1.0 --0.5
0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0 0 --0.5 --1.0 --1.5 --2.0 --2.5
25
5C C --25 C
--3.0 --3.5
--1.5
Ta= 7
10mA
[MOSFET]
--4.0
--4.5
400
Drain-to-Source Voltage, VDS -- V IT03212 RDS(on) -- VGS [MOSFET] Ta=25C
400
Gate-to-Source Voltage, VGS -- V IT03213 RDS(on) -- Ta [MOSFET]
Static Drain-to-Source On-State Resistance, RDS(on) -- m
350 300 250
Static Drain-to-Source On-State Resistance, RDS(on) -- m
350 300 250 200 150 100 50 0 --60
--1.0A
200
-I D=
, VG 0.5A
--4 S=
V
ID= --0.5A
150 100 50 0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
1.0 I D= --
= --10 A, V GS
V
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
IT03214
Ambient Temperature, Ta -- C
IT03215
No. A0336-3/6
CPH5852
10
yfs -- ID
Forward Transfer Admittance, yfs -- S
7 5
[MOSFET] VDS= --10V
--10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
IS -- VSD
[MOSFET] VGS=0V
2
25
C
1.0 7 5 3 2
C -25 C =75 Ta
Source Current, IS -- A
3
Ta=7 5C
--0.3 --0.4 --0.5 --0.6
0.1 --0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Drain Current, ID -- A
2 100
5 7 --10 IT03216
--0.01 --0.2
--0.7
--25C
--0.8 --0.9
25C
--1.0
--1.1
--1.2
SW Time -- ID
[MOSFET]
3 2
IT03217 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS [MOSFET]
VDD= --15V VGS= --10V
Ciss, Coss, Crss -- pF
f=1MHz
Ciss
Switching Time, SW Time -- ns
7 5 3 2 10 7 5 3 2 1.0 --0.1 10 2 3 5 7 --1.0 2 3 5 IT03218 0 --5 --10 --15 --20 --25 --30 100 7 5
td(off)
td(on)
tf
Coss
3 2
Crss
tr
Drain Current, ID -- A
--10 --9
VGS -- Qg
[MOSFET]
Gate-to-Source Voltage, VGS -- V
VDS= --10V ID= --2A
Drain Current, ID -- A
--10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
Drain-to-Source Voltage, VDS -- V IT03219 ASO [MOSFET] 10s IDP= --8A
10 s 0
1m
--8 --7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 5 6 IT03220
ID= --2A
s
10 m
s
10 0m s
Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board (600mm2!0.8mm) 1unit
5 7--0.1 23 5 7--1.0 2 3 5 7 --10 23
DC
op
er ati on
--0.01 --0.01 2 3
Total Gate Charge, Qg -- nC
1.0
PD -- Ta
M ou
Drain-to-Source Voltage, VDS -- V
5 7--100 IT03221
[MOSFET]
Allowable Power Dissipation, PD -- W
0.9 0.8
nt
ed
on
ac
0.6
er
am
ic
bo
ar
d
0.4
(6
00
m
m2 ! 0.
0.2
8m
m
)1
un
it
160
0 0 20 40 60 80 100 120 140
Ambient Temperature, Ta -- C
IT03222
No. A0336-4/6
CPH5852
3 2 1.0
IF -- VF
10000 5 1000 5
IR -- VR
Ta=125C 100C
Reverse Current, IR -- A
Forward Current, IF -- A
7 5 3 2 0.1 7 5 3 2 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 IT09553
100 5 10 5 1.0 5 0.1 5 0.01 5
75C
50C
25C 0C
Ta= 125 C 100 C 75C 50C 25C 0C --25C
--25C
0.001 5 0.0001 0 5 10 15 20 25 30 35 IT09554
Forward Voltage, VF -- V
Average Forward Power Dissipation, PF(AV) -- W
0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.2
PF(AV) -- IO
Reverse Voltage, VR -- V
3 2
C -- VR
Rectangular wave
360
(1)
(2) (4)(3)
Interterminal Capacitance, C -- pF
100 7 5 3 2
Sine wave
180 360
(1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180
0.4 0.6 0.8 1.0 1.2 IT09555
10 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5
Average Output Current, IO -- A
14
IFSM -- t
IS
Reverse Voltage, VR -- V
IT09556
Surge Forward Current, IFSM(Peak) -- A
Current waveform 50Hz sine wave
12
10
20ms t
8
6
4
2 0 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3
Time, t -- s
ID00435
No. A0336-5/6
CPH5852
Note on usage : Since the CPH5852 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of June, 2006. Specifications and information herein are subject to change without notice.
PS No. A0336-6/6

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